Branching and fringing in microstructure electron flow

被引:17
作者
Heller, EJ [1 ]
Shaw, S
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2003年 / 17卷 / 22-24期
关键词
D O I
10.1142/S0217979203021964
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recent experimental work in the Westervelt laboratory at Harvard has succeeded in directly imaging electron flow in two degree of freedom electron gasses formed in semiconductor microstructures. Here, we give a brief account of the unexpected high resolution of the resulting images, the surprising branching of the flow which was observed, and the survival of quantum fringing beyond where it was thought to have been obliterated by thermal effects.
引用
收藏
页码:3977 / 3987
页数:11
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