First Principles Study on Mg2Ge Doping with Transition Metal Elements Sc, Cr, and Mn

被引:2
作者
Dai Song-Li [1 ]
Liang Yong-Chao [1 ]
Ma Jia-Jun [1 ]
机构
[1] Guizhou Univ, Coll Big Data & Informat Engn, Inst New Optoelect Mat & Technol, Guiyang 550025, Peoples R China
关键词
first principles; Mg2Ge; electronic structure; magnetism; optical properties; THERMOELECTRIC PROPERTIES;
D O I
10.11862/CJIC.2022.069
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
In this study, the electronic structures and magnetic and optical properties of Mg2Ge doping with transi. tion metal elements X (X=Sc, Cr, and Mn) were investigated by density functional theory (DFT). The lattice con. stants, band structures, density of states, and optical parameters were calculated for all compounds. The results show that the Fermi level of Mg2Ge can enter into the conduction band after doping with Sc, and Mg2Ge turns into an n. type degenerate semiconductor. It can lead to spin splitting of the band structure and density of states of Mg2Ge near Fermi level after doping with Cr and Mn, resulting in a net magnetic moment, which is shown as a semi.metal. lic magnet and dilute magnetic semiconductor. The net magnetic moment of the system is derived from the 3d orbit. al electrons of impurity atoms and their induced polarization of Ge4p state and Mg2p state spintronics. Compared with the intrinsic Mg2Ge, the doping systems have an improvement in the static permittivity, which indicates that the photocatalytic activity of Mg2Ge is enhanced. In terms of the absorption coefficient, the compounds with impurity atoms extend the absorption range, and the best enhancement appears near.infrared band.
引用
收藏
页码:637 / 644
页数:8
相关论文
共 20 条
  • [1] First Principle Study on Mg2X (X = Si, Ge, Sn) Intermetallics by Bi Micro-Alloying
    Bai, Guoning
    Tian, Jinzhong
    Guo, Qingwei
    Li, Zhiqiang
    Zhao, Yuhong
    [J]. CRYSTALS, 2021, 11 (02): : 1 - 10
  • [2] Third generation photovoltaics
    Brown, Gregory F.
    Wu, Junqiao
    [J]. LASER & PHOTONICS REVIEWS, 2009, 3 (04) : 394 - 405
  • [3] Bismuth doping of induction furnace synthesized Mg2Si, Mg2Sn and Mg2Ge thermoelectric compounds
    Cahana, Meital
    Gelbstein, Yaniv
    [J]. INTERMETALLICS, 2020, 120
  • [4] Thermoelectric Properties of Ag-doped Mg2Ge Thin Films Prepared by Magnetron Sputtering
    Chuang, L.
    Savvides, N.
    Tan, T. T.
    Li, S.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (09) : 1971 - 1974
  • [5] Influence of Sb doping on thermoelectric properties of Mg2Ge materials
    Gao, H. L.
    Zhu, T. J.
    Zhao, X. B.
    Deng, Y.
    [J]. INTERMETALLICS, 2015, 56 : 33 - 36
  • [6] Two-dimensional magnetic crystals and emergent heterostructure devices
    Gong, Cheng
    Zhang, Xiang
    [J]. SCIENCE, 2019, 363 (6428) : 706 - +
  • [7] Synthesis and Thermoelectric Properties of n-Type Mg2Si
    Jung, Jae-Yong
    Kim, Il-Ho
    [J]. ELECTRONIC MATERIALS LETTERS, 2010, 6 (04) : 187 - 191
  • [8] DFT study of X-doped (X = Cu, Ag, Au) boron nitride nanotubes for spintronic and optoelectronic applications
    Kebabi, A.
    Bentabet, A.
    Djeffal, F.
    Ferhati, H.
    Benmekideche, N.
    Benmakhlouf, A.
    Chala, A.
    [J]. OPTIK, 2021, 225 (225):
  • [9] Density functional theory of electronic structure
    Kohn, W
    Becke, AD
    Parr, RG
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) : 12974 - 12980
  • [10] Importance of relativistic effects in electronic structure and thermopower calculations for Mg2Si, Mg2Ge, and Mg2Sn
    Kutorasinski, K.
    Wiendlocha, B.
    Tobola, J.
    Kaprzyk, S.
    [J]. PHYSICAL REVIEW B, 2014, 89 (11):