Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures

被引：29

作者：

Kim, JS ^{[1
]}

Lee, JH ^{[1
]}

Hong, SU ^{[1
]}

Han, WS ^{[1
]}

Kwack, HS ^{[1
]}

Lee, CW ^{[1
]}

Oh, DK ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305606, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 10期

关键词：

D O I：

10.1063/1.1621714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and optical properties of self-assembled InAs quantum dots (QDs) with various InGaAs structures were investigated by transmission electron microscopy (TEM) and photoluminescence (PL). The emission peak position of InAs QDs covered by a 6 nm In0.15Ga0.85As layer was 1.26 mum with PL linewidth of 31 meV, which is narrower than that of QDs in a GaAs matrix. By inserting a 1 nm In0.15Ga0.85As layer below the InAs QD layer with a 6 nm In0.15Ga0.85As overgrowth layer, the emission peak position was redshifted with larger energy-level spacing between the ground states and the first excited states compared to that of QDs with an In0.15Ga0.85As overgrowth layer only. By covering the InAs QDs on a 1 nm In0.15Ga0.85As layer with an 8 nm InxGa1-xAs layer having graded In composition, the emission peak position was 1.32 mum with relatively larger energy-level spacing and narrower PL linewidth compared to QDs covered by an In0.15Ga0.85As layer. The longer emission wavelength with relatively larger energy-level spacing was largely related to the change in the QD shape and size, especially the aspect ratio (height/width), which was confirmed by cross-sectional TEM images. (C) 2003 American Institute of Physics.

引用

页码：6603 / 6606

页数：4

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