Unipolar electric-field-controlled nonvolatile multistate magnetic memory in FeRh/(001)PMN-PT heterostructures over a broad temperature span

被引：3

作者：

Qiao, Kaiming ^{[1
,2
,3
]}

Hu, Fengxia ^{[2
,3
,4
]}

Zhang, Hu ^{[1
]}

Yu, Ziyuan ^{[1
]}

Liu, Xianliang ^{[1
]}

Liang, Yuhang ^{[1
]}

Long, Yi ^{[1
]}

Wang, Jing ^{[2
,3
,5
]}

Sun, Jirong ^{[2
,3
,4
]}

Zhao, Tongyun ^{[2
,6
]}

Shen, Baogen ^{[2
,3
,6
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

[4] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China

[5] Chinese Acad Sci, Fujian Innovat Acad, Fuzhou 350108, Peoples R China

[6] Chinese Acad Sci, Ganjiang Innovat Acad, Ganzhou 341000, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2022年 / 65卷 / 01期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

nonvolatile; FeRh; PMN-PT; electric-field control of magnetism; TRANSITION;

D O I：

10.1007/s11433-021-1779-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Multistate magnetic memory effect in heterostructures composed of FeRh thin films with antiferromagnetic (AFM)-ferromagnetic (FM) phase transition and (001)-oriented PMN-PT substrates has been investigated. Utilizing a unipolar electric field, the nonvolatile change in magnetization was nearly doubled compared with that obtained utilizing a conventional bipolar bias. Four stable nonvolatile magnetic states were obtained over a broad temperature span, from 320 to 390 K, by adjusting the amplitude of the unipolar electric pulses, demonstrating the possibility of realizing a multistate nonvolatile magnetic memory in the FeRh/PMN-PT heterostructures. This work provides a new strategy for enhancing the magnetic response by utilizing unipolar electric fields and promotes the utilization of AFM-FM phase transition materials in multifunctional information storage and novel spintronic devices.

引用

页数：6