Unipolar electric-field-controlled nonvolatile multistate magnetic memory in FeRh/(001)PMN-PT heterostructures over a broad temperature span

被引:3
|
作者
Qiao, Kaiming [1 ,2 ,3 ]
Hu, Fengxia [2 ,3 ,4 ]
Zhang, Hu [1 ]
Yu, Ziyuan [1 ]
Liu, Xianliang [1 ]
Liang, Yuhang [1 ]
Long, Yi [1 ]
Wang, Jing [2 ,3 ,5 ]
Sun, Jirong [2 ,3 ,4 ]
Zhao, Tongyun [2 ,6 ]
Shen, Baogen [2 ,3 ,6 ]
机构
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[4] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China
[5] Chinese Acad Sci, Fujian Innovat Acad, Fuzhou 350108, Peoples R China
[6] Chinese Acad Sci, Ganjiang Innovat Acad, Ganzhou 341000, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
nonvolatile; FeRh; PMN-PT; electric-field control of magnetism; TRANSITION;
D O I
10.1007/s11433-021-1779-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Multistate magnetic memory effect in heterostructures composed of FeRh thin films with antiferromagnetic (AFM)-ferromagnetic (FM) phase transition and (001)-oriented PMN-PT substrates has been investigated. Utilizing a unipolar electric field, the nonvolatile change in magnetization was nearly doubled compared with that obtained utilizing a conventional bipolar bias. Four stable nonvolatile magnetic states were obtained over a broad temperature span, from 320 to 390 K, by adjusting the amplitude of the unipolar electric pulses, demonstrating the possibility of realizing a multistate nonvolatile magnetic memory in the FeRh/PMN-PT heterostructures. This work provides a new strategy for enhancing the magnetic response by utilizing unipolar electric fields and promotes the utilization of AFM-FM phase transition materials in multifunctional information storage and novel spintronic devices.
引用
收藏
页数:6
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