A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

被引:89
作者
Borchert, James W. [1 ]
Weitz, R. Thomas [1 ]
Ludwigs, Sabine [2 ]
Klauk, Hagen [3 ]
机构
[1] Georg August Univ Gottingen, Inst Phys 1, Friedrich Hund Pl 1, D-37077 Gottingen, Germany
[2] Univ Stuttgart, Inst Polymer Chem, IPOC Funct Polymers, Pfaffenwaldring 55, D-70569 Stuttgart, Germany
[3] Max Planck Inst Solid State Res, Organ Elect Grp, Heisenbergstr 1, D-70569 Stuttgart, Germany
关键词
charge injection; contact resistance; Fermi-level pinning; interfaces; organic transistors; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; ENERGY-LEVEL ALIGNMENT; LIGHT-EMITTING-DIODES; CHARGE INJECTION; LARGE-AREA; ELECTRONIC DEVICES; HIGH-MOBILITY; FUNCTIONALIZED ACENES;
D O I
10.1002/adma.202104075
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
To take full advantage of recent and anticipated improvements in the performance of organic semiconductors employed in organic transistors, the high contact resistance arising at the interfaces between the organic semiconductor and the source and drain contacts must be reduced significantly. To date, only a small portion of the accumulated research on organic thin-film transistors (TFTs) has reported channel-width-normalized contact resistances below 100 omega cm, well above what is regularly demonstrated in transistors based on inorganic semiconductors. A closer look at these cases and the relevant literature strongly suggests that the most significant factor leading to the lowest contact resistances in organic TFTs so far has been the control of the thin-film morphology of the organic semiconductor. By contrast, approaches aimed at increasing the charge-carrier density and/or reducing the intrinsic Schottky barrier height have so far played a relatively minor role in achieving the lowest contact resistances. Herein, the possible explanations for these observations are explored, including the prevalence of Fermi-level pinning and the difficulties in forming optimized interfaces with organic semiconductors. An overview of the research on these topics is provided, and potential device-engineering solutions are discussed based on recent advancements in the theoretical and experimental work on both organic and inorganic semiconductors.
引用
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页数:24
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