Design and Performance Assessment of Dielectrically Modulated Nanotube TFET Biosensor

被引：53

作者：

Gedam, Anju ^{[1
]}

Acharya, Bibhudendra ^{[1
]}

Mishra, Guru Prasad ^{[1
]}

机构：

[1] Natl Inst Technol Raipur, Dept Elect & Commun, Raipur 492010, Madhya Pradesh, India

来源：

IEEE SENSORS JOURNAL | 2021年 / 21卷 / 15期

关键词：

Biosensors; Logic gates; Molecular biophysics; Metals; Silicon; Sensors; Fabrication; Biosensor; DC; RF parameters; nanogap cavity; sensitivity; FIELD-EFFECT TRANSISTOR; TUNNEL FET; SENSITIVITY; DEVICES; IMPACT;

D O I：

10.1109/JSEN.2021.3080922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The manuscript proposes a novel charge plasma-based junctionless silicon dual cavity nanotube tunnel field-effect transistor (DC-NT-TFET) based biosensor for the detection of neutral and charged biomolecules. For improved sensing ability, the nanogap cavity is introduced in the inner as well as the outer portion of the NT-TFET. Also, the vertical orientation of the device enhances the even distribution of the biomolecules within the cavity area. The inner cavity provides more space for immobilization of the biomolecules and utilizes the advantages of material solubility. In this manuscript sensitivity of the proposed biosensor is Investigated for four neutral biomolecules of dielectric constant, streptavidin (k =.1), biotin (k = 2.63), 3-aminopropyl-triethoxysilane (APTES) (k = 3.57), and protein (k = 8). Also, charged biomolecule, deoxyribonucleic acid (DNA) with a specific dielectric constant of k = 6 is examined for different positive as well as negative charge density. The sensing capability of the device is analyzed in terms of various DC and RF performance parameters. Also, outer cavity length optimization and on various biomolecules are analyzed in the manuscript.

引用

页码：16761 / 16769

页数：9

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