Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature

We have observed a degradation in the epitaxial layer quality of AlInAs when it is grown by molecular beam epitaxy at a substrate temperature of about 400 degrees C compared to that for alloys grown at 300 and 500 degrees C. The barrier height and ideality factor of Ti- and Au-AlInAs Schottky diodes also exhibit large spatial variations and dependence on growth temperatures. The observed phenomena can be explained by invoking a kinetic growth model or thermodynamic phase equilibria in the growing surface layer. (C) 1996 American Institute of Physics.