Highly enhanced field emission from vertically aligned carbon nanotubes grown on a patterned substrate via non-lithographic method

In the present work, a silicon substrate has been patterned with a gold thin film of thickness 15 nm using thermal evaporation, followed by growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition. The effect of temperature on the growth of CNTs on Au patterned substrate is studied using Raman and Field emission scanning electron microscope (SEM). A significant change in the growth of the CNTs grown on Au film patterned substrate with temperature can be observed using SEM images. However, no significant change in the micro crystallinity of the films was observed. Field emission properties of vertically aligned carbon nanotubes, grown at different temperatures, on gold film patterned substrate has been investigated. For the non-patterned substrate, for the CNT film grown at 900 degrees C, the current density comes out to be 8.0 mA/cm(2)@ 4.8V/mu m, which increases to 14.6 mA/cm(2) in the case of CNT film grown on gold patterned substrate. The observed enhancement of nearly 180% in current density for the patterned substrate as compared to non-patterned silicon substrate is primarily attributed to the reduced electric field screening. The reduced screening is realized with the help of COMSOL simulation, showing a significant enhancement in the local electric field near edges.