Accuracy evaluation of on-wafer load-pull measurements

被引：26
|
作者：
Ferrero, A [1 ]
Teppati, V [1 ]
Carullo, A [1 ]
机构：
[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 01期
关键词：
accuracy; load-pull; microwave measurements;
D O I：
10.1109/22.899960
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the residual calibration uncertainty effects in on-wafer load-pull measurements. After the systematic error correction (based on a traditional error-box model) has been applied, the residual uncertainty on absolute-power-level measurements can dramatically affect the accuracy of typical nonlinear parameters such as gain and power-added efficiency under different load conditions. The main residual uncertainty contributions are highlighted both by a theoretical analysis and experiments, Finally, one of the possible causes for intermodulation-distortion measurement errors is shown.
引用
收藏
页码：39 / 43
页数：5
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