Stability improvement of organic light-emitting diode with aluminum cathode deposited by ion beam assisted deposition method

被引:1
作者
Jeong, SM
Koo, WH
Choi, SH
Jo, SJ
Baik, HK [1 ]
Lee, SJ
Song, KM
机构
[1] Yonsei Univ, Dept Engn Met, Seoul 120749, South Korea
[2] Kyungsung Univ, Dept Mat Sci & Engn, Pusan 608736, South Korea
[3] Konkuk Univ, Dept Appl Phys, Chungju 380701, South Korea
关键词
OLED; ion beam assisted deposition; contact resistance; lifetime;
D O I
10.1016/j.tsf.2004.07.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly stable organic electroluminescent devices based on spin-coated poly-p-phenylene-vynylene (PPV) thin films have been achieved. We investigated the electrical properties of ion beam assisted aluminum cathode contacting PPV compared that of thermal evaporation. Energetic particles of Al assisted by Ar+ ion increase the contact area between Al and PPV minimizing contact resistance. In addition, dense Al cathode inhibits the permeation of H2O and O-2 through pinhole defects, which results in retarding dark spot growth. It is believed that the lifetime of organic light-emitting diode (OLED) device was enhanced effectively by ion beam assisted deposition process resulting from dense Al structure. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:227 / 230
页数:4
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