Electrical linewidth metrology for systematic CD variation characterization and causal analysis

被引：16

作者：

Cain, JP ^{[1
]}

Spanos, CJ ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2 | 2003年 / 5038卷

关键词：

electrical linewidth metrology; critical dimension variation; CD variation; optimum sampling plan; photolithography;

D O I：

10.1117/12.483664

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Control of critical dimension (CD) variation is of extreme importance in modem semiconductor manufacturing processes. To be controlled, the nature of CD variation must be understood. This paper outlines a method for characterizing systematic spatial variation by means of dense electrical linewidth measurements, including actual sample data. In addition, since exhaustive sampling is prohibitively expensive for routine use, a method is discussed for finding an optimum economical sampling plan and using this plan to track systematic CD variation over,time.

引用

页码：350 / 361

页数：12

共 12 条

[1]

[Anonymous], J MICROLITH MICROFAB

[2] Impact of illumination pupil-fill spatial variation on simulated imaging performance [J].

Barrett, TC .

OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 :804-817

[3]

BORODOVSKY Y, 1995, P SOC PHOTO-OPT INS, V2440, P750, DOI 10.1117/12.209322

[4]

BRUNTON JA, 1997, PEDIATR RES, V41, P1

[5]

CRESSWELL MW, 2001, HDB SILICON SEMICOND, P377

[6] Electrical critical dimension metrology for 100-nm linewidths and below [J].

Grenville, A ;

Coombs, B ;

Hutchinson, J ;

Kuhn, K ;

Miller, D ;

Troccolo, P .

OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 :452-459

[7] Impact of mask errors on full chip error budgets [J].

Schellenberg, FM ;

Boksha, V ;

Cobb, N ;

Lai, JC ;

Chen, CH ;

Mack, C .

OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 :261-275

[8] Understanding lens aberration and influences to lithographic imaging [J].

Smith, BW ;

Schlief, R .

OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 :294-306

[9] Characterizing post exposure bake processing for transient and steady state conditions, in the context of critical dimension control [J].

Steele, D ;

Coniglio, A ;

Tang, C ;

Singh, B .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2, 2002, 4689 :517-530

[10] Lithographic effects of mask critical dimension error [J].

Wong, AK ;

Ferguson, RA ;

Liebmann, LW ;

Mansfield, SM ;

Molless, AF ;

Neisser, MO .

OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 :106-116

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