Electrical linewidth metrology for systematic CD variation characterization and causal analysis

被引：16

作者：

Cain, JP ^{[1
]}

Spanos, CJ ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2 | 2003年 / 5038卷

关键词：

electrical linewidth metrology; critical dimension variation; CD variation; optimum sampling plan; photolithography;

D O I：

10.1117/12.483664

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Control of critical dimension (CD) variation is of extreme importance in modem semiconductor manufacturing processes. To be controlled, the nature of CD variation must be understood. This paper outlines a method for characterizing systematic spatial variation by means of dense electrical linewidth measurements, including actual sample data. In addition, since exhaustive sampling is prohibitively expensive for routine use, a method is discussed for finding an optimum economical sampling plan and using this plan to track systematic CD variation over,time.

引用

页码：350 / 361

页数：12

共 12 条

[1] [Anonymous], J MICROLITH MICROFAB
[2] Impact of illumination pupil-fill spatial variation on simulated imaging performance
Barrett, TC
[J]. OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 804 - 817
[3] BORODOVSKY Y, 1995, P SOC PHOTO-OPT INS, V2440, P750, DOI 10.1117/12.209322
[4] BRUNTON JA, 1997, PEDIATR RES, V41, P1
[5] CRESSWELL MW, 2001, HDB SILICON SEMICOND, P377
[6] Electrical critical dimension metrology for 100-nm linewidths and below
Grenville, A
Coombs, B
Hutchinson, J
Kuhn, K
Miller, D
Troccolo, P
[J]. OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 452 - 459
[7] Impact of mask errors on full chip error budgets
Schellenberg, FM
Boksha, V
Cobb, N
Lai, JC
Chen, CH
Mack, C
[J]. OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 : 261 - 275
[8] Understanding lens aberration and influences to lithographic imaging
Smith, BW
Schlief, R
[J]. OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 294 - 306
[9] Characterizing post exposure bake processing for transient and steady state conditions, in the context of critical dimension control
Steele, D
Coniglio, A
Tang, C
Singh, B
[J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVI, PTS 1 & 2, 2002, 4689 : 517 - 530
[10] Lithographic effects of mask critical dimension error
Wong, AK
Ferguson, RA
Liebmann, LW
Mansfield, SM
Molless, AF
Neisser, MO
[J]. OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 106 - 116

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