Hot-electron transport studies of the Ag/Si(001) interface using ballistic electron emission microscopy

被引：10

作者：

Garramone, J. J. ^{[1
]}

Abel, J. R. ^{[1
]}

Sitnitsky, I. L. ^{[1
]}

LaBella, V. P. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2010年 / 28卷 / 04期

关键词：

SCHOTTKY DIODES; METAL-FILMS; AG; SURFACES;

D O I：

10.1116/1.3397795

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ballistic electron emission microscopy has been utilized to investigate the hot-electron transport properties of the Ag/Si(001) Schottky diode utilizing metal films deposited both in situ and ex situ. The Schottky barrier heights are measured to be 0.57 +/- 0.02 and 0.59 +/- 0.02 eV for the ex situ and in situ depositions, respectively. The metal overlayers demonstrate typical Volmer-Weber growth when deposited on the Si(001) semiconducting substrate, as seen in the scanning tunneling microscopy images. An enhancement in hot-electron transmission is measured for the in situ deposited metal films when compared to the ex situ films. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3397795]

引用

页码：643 / 646

页数：4

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