Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator

被引：12

作者：

Kim, C. H. ^{[1
]}

Tondelier, D. ^{[1
]}

Geffroy, B. ^{[1
,2
]}

Bonnassieux, Y. ^{[1
]}

Horowitz, G. ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

[2] CEA Saclay, DSM IRAMIS SPCSI LCSI, F-91191 Gif Sur Yvette, France

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2012年 / 57卷 / 02期

关键词：

FIELD-EFFECT TRANSISTORS;

D O I：

10.1051/epjap/2011110272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The organic thin-film transistors (OTFTs) incorporating pentacene/SU-8 interface were fabricated and characterized. SU-8, a reliable epoxy-based photoresist, is tested as a potential highly-stable polymeric gate dielectric for OTFTs. The fabricated devices showed promising electrical performance with on-off ratio up to 10(7) and field-effect mobility up to 0.56 cm(2)/V s. Several device characteristics are further analyzed. There existed a leakage current path due to the uncontrolled pentacene coverage and we revealed that precise alignment of the evaporation mask of pentacene is critical for eliminating this problem. Pentacene grain formation largely depended on the growth condition on the SU-8 surface and small-grain films offered outstanding performance possibly owing to enhanced inter-domain connections. Natural degradation of the OTFTs is also discussed in terms of environmental stability and the pentacene/SU-8 transistor operated with noticeable air stability under ambient conditions.

引用

页数：6

共 18 条

[1] High-Performance Organic Field-Effect Transistors [J].

Braga, Daniele ;

Horowitz, Gilles .

ADVANCED MATERIALS, 2009, 21 (14-15) :1473-1486

[2] Aging effects and electrical stability in pentacene thin film transistors [J].

Cipolloni, S. ;

Mariucci, L. ;

Valletta, A. ;

Simeone, D. ;

De Angelis, F. ;

Fortunato, G. .

THIN SOLID FILMS, 2007, 515 (19) :7546-7550

[3] SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography [J].

del Campo, A. ;

Greiner, C. .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2007, 17 (06) :R81-R95

[4] Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics [J].

Facchetti, A ;

Yoon, MH ;

Marks, TJ .

ADVANCED MATERIALS, 2005, 17 (14) :1705-1725

[5] Air-stable polymer organic thin-film transistors by solution-processed encapsulation [J].

Fu, Yu ;

Tsai, Feng-Yu .

ORGANIC ELECTRONICS, 2011, 12 (01) :179-184

[6] Lifetime of organic thin-film transistors with organic passivation layers - art. no. 073519 [J].

Han, SH ;

Kim, JH ;

Jang, J ;

Cho, SM ;

Oh, MH ;

Lee, SH ;

Choo, DJ .

APPLIED PHYSICS LETTERS, 2006, 88 (07)

[7] Tunneling current in polycrystalline organic thin-film transistors [J].

Horowitz, G .

ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (01) :53-60

[8] Lifetime enhancement of organic thin-film transistors protected with organic layer [J].

Jung, Hoon ;

Lim, Taehoon ;

Choi, Youngill ;

Yi, Mihye ;

Won, Jongchan ;

Pyo, Seungmoon .

APPLIED PHYSICS LETTERS, 2008, 92 (16)

[9] Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods [J].

Kalb, Wolfgang L. ;

Batlogg, Bertram .

PHYSICAL REVIEW B, 2010, 81 (03)

[10] Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors [J].

Kim, Chang Hyun ;

Bonnassieux, Yvan ;

Horowitz, Gilles .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (09) :1302-1304

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