Thermopower of a 2D Electron Gas in Suspended AlGaAs/GaAs Heterostructures

被引:5
作者
Schmidt, M. [1 ]
Schneider, G.
Heyn, Ch
Stemmann, A.
Hansen, W.
机构
[1] Inst Angew Phys, D-20355 Hamburg, Germany
关键词
Thermopower; thermal conductivity; suspended heterostructure; GaAs; HEMT; DIFFUSION THERMOPOWER;
D O I
10.1007/s11664-011-1826-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane. We show that the small dimension of the membrane substantially reduces the thermal conductivity compared with bulk material so that it is possible to establish a strong thermal gradient along the 2DEG even over a distance of a few micrometers. We find that the zero-field thermopower is significantly affected by the micropatterning. In contrast to 2DEGs incorporated in a bulk material, the diffusion contribution to the thermopower remains dominant up to temperature of 7 K, until the phonon drag becomes strong and governs the thermopower. We also find that the coupling between electrons and phonons in the phonon-drag regime is due to screened deformation potentials, in contrast to the piezoelectric coupling found for bulk phonons.
引用
收藏
页码:1286 / 1289
页数:4
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