A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

被引：41
作者：
Toyosaki, H
Fukumura, T [1 ]
Ueno, K
Nakano, M
Kawasaki, M
机构：
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
[2] Natl Inst Mat Sci, COMET, Tsukuba, Ibaraki 3050044, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期
关键词：
tunneling magnetoresistance; ferromagnetic semiconductor; Co-doped TiO2; magnetic tunnel junction; wide gap semiconductor; oxide semiconductor;
D O I：
10.1143/JJAP.44.L896
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCOxO2-delta and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of similar to 11% at 15K, indicating that Ti1-xCoxO2-delta can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.
引用
收藏
页码：L896 / L898
页数：3
相关论文
共 21 条
[1]   Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier [J].
Chiba, D ;
Matsukura, F ;
Ohno, H .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :966-969
[2]  
Chun SH, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.100408
[3]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[4]   Magnetic oxide semiconductors [J].
Fukumura, T ;
Toyosaki, H ;
Yamada, Y .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S103-S111
[5]   Magneto-optical spectroscopy of anatase TiO2 doped with Co [J].
Fukumura, T ;
Yamada, Y ;
Tamura, K ;
Nakajima, K ;
Aoyama, T ;
Tsukazaki, A ;
Sumiya, M ;
Fuke, S ;
Segawa, Y ;
Chikyow, T ;
Hasegawa, T ;
Koinuma, H ;
Kawasaki, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (2A) :L105-L107
[6]   Spin-dependent inelastic electron tunneling spectroscopy of magnetic tunnel junctions [J].
Hayashi, M ;
Ando, Y ;
Oogane, M ;
Kubota, H ;
Miyazaki, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (11A) :7472-7476
[7]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226
[8]   Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide [J].
Matsumoto, Y ;
Murakami, M ;
Shono, T ;
Hasegawa, T ;
Fukumura, T ;
Kawasaki, M ;
Ahmet, P ;
Chikyow, T ;
Koshihara, S ;
Koinuma, H .
SCIENCE, 2001, 291 (5505) :854-856
[9]   Ferromagnetism in co-doped TiO2 rutile thin films grown by laser molecular beam epitaxy [J].
Matsumoto, Y ;
Takahashi, R ;
Murakami, M ;
Koida, T ;
Fan, XJ ;
Hasegawa, T ;
Fukumura, T ;
Kawasaki, M ;
Koshihara, SY ;
Koinuma, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (11B) :L1204-L1206
[10]  
Mott N. F., 1979, ELECT PROCESSES NONC
123