High speed deposition of Y2O3 films by laser-assisted chemical vapor deposition

Thick yttria (Y2O3) films were synthesized at high speeds by laser-assisted chemical vapor deposition (LCVD) using an Y(dpm)(3) (dpm = dipivaloylmethanate) precursor. The effects of deposition conditions on the deposition rate and their microstructure were investigated. While the deposition rate was less than a few microns per hour at low laser powers (P-L) less than 100W, significantly high deposition rates of more than 200 mu m/h (56nm/s) were obtained at PL More than 160W. The highest deposition rate in this study was 300 mu m/h (83 nm/s) being 100 to 1000 times greater than those of conventional CVD processes. Deposited films were dense and isotropic with no preferred orientation showing cauliflower-like microstructure.