Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography

被引：1

作者：

Dumas, Paul ^{[1
,2
]}

Duguay, Sebastien ^{[2
]}

Borrel, Julien ^{[1
]}

Hilario, Fanny ^{[1
]}

Blavette, Didier ^{[2
]}

机构：

[1] STMicroelect Crolles, Crolles, France

[2] Univ Rouen, GPM, UMR CNRS, St Etienne Du Rouvray, France

来源：

MICROSCOPY AND MICROANALYSIS | 2022年 / 28卷 / 04期

关键词：

atom probe tomography; carbon; ion implantation; silicon; DEFECTS; EVENTS; BORON;

D O I：

10.1017/S1431927621012800

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atom probe tomography was employed to observe and derive the composition of carbon clusters in implanted silicon. This value, which is of interest to the microelectronic industry when considering ion implantation defects, was estimated not to exceed 2 at%. This measurement has been done by fitting the distribution of first nearest neighbor distances between monoatomic carbon ions (C+ and C2+). Carbon quantification has been considerably improved through the detection of molecular ions, using lower electric field conditions as well as equal proportions of C-12 and C-13. In these conditions and using another quantification method, we have shown that the carbon content in clusters approaches 50 at%. This result very likely indicates that clusters are nuclei of the SiC phase.

引用

页码：994 / 997

页数：4

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