A Wideband Noise and Harmonic Distortion Canceling Low-Noise Amplifier for High-Frequency Ultrasound Transducers

被引：2

作者：

Tang, Yuxuan ^{[1
]}

Feng, Yulang ^{[1
]}

Hu, He ^{[2
]}

Fang, Cheng ^{[2
]}

Deng, Hao ^{[1
]}

Zhang, Runxi ^{[3
]}

Zou, Jun ^{[2
]}

Chen, Jinghong ^{[1
]}

机构：

[1] Univ Houston, Dept Elect & Comp Engn, Houston, TX 77004 USA

[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

[3] East China Normal Univ, Sch Commun & Elect Engn, Shanghai 200241, Peoples R China

来源：

SENSORS | 2021年 / 21卷 / 24期

关键词：

high-frequency ultrasound transducers; low-noise amplifier; noise cancellation; harmonic distortion cancellation; resistive shunt-feedback amplifier; wideband impedance matching; CHIP;

D O I：

10.3390/s21248476

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper presents a wideband low-noise amplifier (LNA) front-end with noise and distortion cancellation for high-frequency ultrasound transducers. The LNA employs a resistive shunt-feedback structure with a feedforward noise-canceling technique to accomplish both wideband impedance matching and low noise performance. A complementary CMOS topology was also developed to cancel out the second-order harmonic distortion and enhance the amplifier linearity. A high-frequency ultrasound (HFUS) and photoacoustic (PA) imaging front-end, including the proposed LNA and a variable gain amplifier (VGA), was designed and fabricated in a 180 nm CMOS process. At 80 MHz, the front-end achieves an input-referred noise density of 1.36 nV/sqrt (Hz), an input return loss (S-11) of better than -16 dB, a voltage gain of 37 dB, and a total harmonic distortion (THD) of -55 dBc while dissipating a power of 37 mW, leading to a noise efficiency factor (NEF) of 2.66.

引用

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