High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

被引：94

作者：

Guha, S ^{[1
]}

Cartier, E

Bojarczuk, NA

Bruley, J

Gignac, L

Karasinski, J

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

[2] IBM E Fishkill, Hopewell Junction, NY USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 01期

关键词：

D O I：

10.1063/1.1373695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the potential for ultrathin aluminum-oxide films as alternate gate dielectrics for Si complementary metal-oxide-semiconductor technology. Films are deposited in ultrahigh vacuum utilizing atomic beams of aluminum and oxygen on Si(100) surfaces. We show device-quality Si(100)/Al2O3 interfaces with interfacial trap densities in the 10(10) cm(-2) eV(-1) range, and with leakage current densities five orders of magnitude lower than what is observed in SiO2 insulators at the same equivalent electrical thickness. As-grown films possess an amorphous-to-microcrystalline structure, depending upon the deposition temperature, and any interfacial layers between the Si(100) and Al2O3 layer are < similar to0.5 nm. (C) 2001 American Institute of Physics.

引用

页码：512 / 514

页数：3

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