Charge transport mechanism in copper phthalocyanine thin films with and without traps

被引：30

作者：

Rani, Varsha ^{[1
]}

Sharma, Akanksha ^{[1
]}

Kumar, Pramod ^{[1
]}

Singh, Budhi ^{[1
]}

Ghosh, Subhasis ^{[1
]}

机构：

[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India

来源：

RSC ADVANCES | 2017年 / 7卷 / 86期

关键词：

TRAPPING STATES; POLYCRYSTALLINE; PERFORMANCE; TRANSISTORS; DEPENDENCE; MOBILITY; DENSITY;

D O I：

10.1039/c7ra08316e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. Previously, charge transport in polycrystalline thin films has been widely described by the multiple trapping and release (MTR) model, without emphasizing the origin of the traps. In this work, polycrystalline organic thin films with and without traps have been grown by engineering different growth conditions. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films and completely different charge transport mechanisms can be observed in thin films with and without traps.

引用

页码：54911 / 54919

页数：9

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