Fabrication of nanopit arrays on Si(111)

被引：13

作者：

Moon, WC ^{[1
]}

Yoshinobu, T ^{[1
]}

Iwasaki, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1B期

关键词：

AFM; nanofabrication; quantum dot; silicon;

D O I：

10.1143/JJAP.38.483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication of nanopit arrays on n-type Si(lll) substrates by anodic oxidation with atomic force microscope (AFM) followed by chemical etching is presented. Possible applications for nanopit arrays include controlled nucleation sites in crystal growth and metal embedding for quantum devices. In this study, we investigate the anodic oxidation and chemical etching processes in order to optimize the conditions for the fabrication of dots and pits of the desired shape and size. The dependence of the process on bias voltage, pulse length, and humidity is reported.

引用

页码：483 / 486

页数：4

共 11 条

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