In situ preparation of SiC/Si3N4-NW composite powders by combustion synthesis

被引：26

作者：

Zheng, Chao-Sheng ^{[1
]}

Yan, Qing-Zhi ^{[1
]}

Xia, Min ^{[2
]}

Ge, Chang-Chun ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Lab Special Ceram & Powder Met, Beijing 100083, Peoples R China

[2] SW Jiaotong Univ, Inst Powder Met & Adv Ceram, Chengdu 610031, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷 / 01期

关键词：

SiC; Si3N4; Combustion synthesis; Nanowires; CERAMIC-MATRIX COMPOSITES; MECHANICAL-PROPERTIES; SILICON-CARBIDE; TOUGHENING MECHANISMS; SI3N4; NANOWIRES; CRYSTAL-GROWTH; ALPHA-SI3N4; NITRIDE; MICROSTRUCTURE; ACTIVATION;

D O I：

10.1016/j.ceramint.2011.07.032

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Large-scale composite powders containing silicon carbide (SiC) particles and silicon nitride nanowires (Si3N4-NWs) were synthesized in situ by combustion synthesis (CS). In this process, a mixture of silicon, carbon black, polytetrafluoroethylene (PTFE) and a small amount of iron powders was used as the precursor. The products were characterized by XRD, SEM, EDS and TEM. The particles are equiaxed with diameters in the micron range, and the in situ formed nanowires are straight with uniform diameters of 20-350 nm and lengths of tens of microns. The Si3N4-NWs are characterized to be alpha-phase single crystals grown along the [101] or [100] direction. VLS and SLGS processes are proposed as the growth mechanisms of the nanowires. The as-synthesized powders have great potential for use in the preparation of high-performance SiC/Si3N4NW composites. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：487 / 493

页数：7

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