Raman Spectroscopy Analysis Of Mechanical Stress Near Cu-TSVs

被引：17

作者：

De Wolf, Ingrid ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

STRESS MANAGEMENT FOR 3D ICS USING THROUGH SILICON VIAS: INTERNATIONAL WORKSHOP ON STRESS MANAGEMENT FOR 3D ICS USING THROUGH SILICON VIAS | 2011年 / 1378卷

关键词：

Raman spectroscopy; TSV; stress; MICRO-RAMAN; DEVICES;

D O I：

10.1063/1.3615701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper discusses Raman spectroscopy measurements of stress near Cu-TSVs (Through Silicon Vias) used in 3D stacking of thinned chips. It discusses the resolution and penetration depth of the technique and the relation between the measured Raman shift and stress. Using a simple model, the various stress components near TSVs are discussed and the relation between the measured Raman shift and these stress components is analyzed. Results obtained on TSVs with nearby shallow-trench isolation, with different Cu chemistry, with and without SiO2 layer on top, and with different aspect ratio are discussed and analyzed using the simple model.

引用

页码：138 / 149

页数：12

共 14 条

[1] PIEZO-RAMAN MEASUREMENTS AND ANHARMONIC PARAMETERS IN SILICON AND DIAMOND [J].