Gate oxide reliability for nano-scale CMOS

被引：1
|
作者：
Stathis, JH [1 ]
机构：
[1] IBM Corp, SRDC, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
IPFA 2005: PROCEEDINGS OF THE 12TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2005年
关键词：
BREAKDOWN; LIMITS;
D O I：
10.1109/IPFA.2005.1469145
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：127 / 130
页数：4
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