Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

被引：48

作者：

Yang, Zhi-Guo ^{[1
]}

Zhu, Li-Ping ^{[1
]}

Guo, Yan-Min ^{[1
]}

Tian, Wei ^{[1
]}

Ye, Zhi-Zhen ^{[1
]}

Zhao, Bing-Hui ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

PHYSICS LETTERS A | 2011年 / 375卷 / 16期

基金：

中国国家自然科学基金;

关键词：

Valence-band offset; X-ray photoelectron spectroscopy; NiO/ZnO heterojunction; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; FABRICATION; EMISSION; FILMS;

D O I：

10.1016/j.physleta.2011.03.021

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (Delta Ev) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (Delta E-C) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1760 / 1763

页数：4

共 50 条

[41] Direct determination of the band offset in atomic layer deposited ZnO/hydrogenated amorphous silicon heterojunctions from X-ray photoelectron spectroscopy valence band spectra [J].

Korte, L. ;

Roessler, R. ;

Pettenkofer, C. .

JOURNAL OF APPLIED PHYSICS, 2014, 115 (20)

[42] Photosensitive and temperature-dependent I-V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode [J].

Long, Hao ;

Ai, Lei ;

Li, Songzhan ;

Huang, Huihui ;

Mo, Xiaoming ;

Wang, Haoning ;

Chen, Zhao ;

Liu, Yuping ;

Fang, Guojia .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2014, 184 :44-48

[43] Fabrication of p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors via thermal oxidation and hydrothermal growth processes [J].

Luo, Yingmin ;

Yin, Bing ;

Zhang, Heqiu ;

Qui, Yu ;

Lei, Jixue ;

Chang, Yue ;

Zhao, Yu ;

Ji, Jiuyu ;

Hu, Lizhong .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (03) :2342-2348

[44] X-ray photoelectron spectroscopy and spectroscopic ellipsometry analysis of the p-NiO/n-Si heterostructure system grown by pulsed laser deposition [J].

Chaoudhary, S. ;

Dewasi, A. ;

Ghosh, S. ;

Choudhary, R. J. ;

Phase, D. M. ;

Ganguli, T. ;

Rastogi, V ;

Pereira, R. N. ;

Sinopoli, A. ;

Aissa, B. ;

Mitra, A. .

THIN SOLID FILMS, 2022, 743

[45] Determination of band offset in InP/YSZ hetero-junction by X-ray photoelectron spectroscopy [J].

Yao, Jian Ke ;

Ye, Fan ;

Wang, Bo ;

Cai, Xing-Min ;

Fan, Ping .

VACUUM, 2018, 147 :143-148

[46] Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy [J].

Wang, Jun ;

Liu, Xiang-Lin ;

Yang, An-Li ;

Zheng, Gao-Lin ;

Yang, Shao-Yan ;

Wei, Hong-Yuan ;

Zhu, Qin-Sheng ;

Wang, Zhan-Guo .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 103 (04) :1099-1103

[47] Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy [J].

Song, H. P. ;

Yang, A. L. ;

Wei, H. Y. ;

Guo, Y. ;

Zhang, B. ;

Zheng, G. L. ;

Yang, S. Y. ;

Liu, X. L. ;

Zhu, Q. S. ;

Wang, Z. G. ;

Yang, T. Y. ;

Wang, H. H. .

APPLIED PHYSICS LETTERS, 2009, 94 (22)

[48] UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process [J].

Echresh, Ahmad ;

Chey, Chan Oeurn ;

Shoushtari, Morteza Zargar ;

Khranovskyy, Volodymyr ;

Nur, Omer ;

Willander, Magnus .

JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 632 :165-171

[49] Band offset of the In2S3/indium tin oxide interface measured by X-ray photoelectron spectroscopy [J].

Menon, M. R. Rajesh ;

Mancini, A. ;

Kartha, C. Sudha ;

Vijayakumar, K. P. ;

Santoni, A. .

THIN SOLID FILMS, 2012, 520 (18) :5856-5859

[50] Barrier thickness dependence of MgxZn1-xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode [J].

Hwang, Jun Dar ;

Jiang, Jhong Yung .

RSC ADVANCES, 2019, 9 (51) :29967-29972

← 1 2 3 4 5 →