Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

被引：48

作者：

Yang, Zhi-Guo ^{[1
]}

Zhu, Li-Ping ^{[1
]}

Guo, Yan-Min ^{[1
]}

Tian, Wei ^{[1
]}

Ye, Zhi-Zhen ^{[1
]}

Zhao, Bing-Hui ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

PHYSICS LETTERS A | 2011年 / 375卷 / 16期

基金：

中国国家自然科学基金;

关键词：

Valence-band offset; X-ray photoelectron spectroscopy; NiO/ZnO heterojunction; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; FABRICATION; EMISSION; FILMS;

D O I：

10.1016/j.physleta.2011.03.021

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (Delta Ev) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (Delta E-C) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1760 / 1763

页数：4

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