Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

被引：48

作者：

Yang, Zhi-Guo ^{[1
]}

Zhu, Li-Ping ^{[1
]}

Guo, Yan-Min ^{[1
]}

Tian, Wei ^{[1
]}

Ye, Zhi-Zhen ^{[1
]}

Zhao, Bing-Hui ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

PHYSICS LETTERS A | 2011年 / 375卷 / 16期

基金：

中国国家自然科学基金;

关键词：

Valence-band offset; X-ray photoelectron spectroscopy; NiO/ZnO heterojunction; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; FABRICATION; EMISSION; FILMS;

D O I：

10.1016/j.physleta.2011.03.021

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (Delta Ev) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (Delta E-C) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1760 / 1763

页数：4

共 50 条

[21] A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector [J].

Debnath, Ratan ;

Xie, Ting ;

Wen, Baomei ;

Li, Wei ;

Ha, Jong Y. ;

Sullivan, Nichole F. ;

Nguyen, Nhan V. ;

Motayed, Abhishek .

RSC ADVANCES, 2015, 5 (19) :14646-14652

[22] P-NiO/n-ZnO heterojunction photodiodes with an MgZnO/ZnO quantum well insertion layer [J].

Hwang, J. D. ;

Jiang, C., I ;

Hwang, S. B. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 105

[23] Enhancing the Photoresponse of p-NiO/n-ZnO Heterojunction Photodiodes Using Post ZnO Treatment [J].

Hwang, Jun-Dar ;

Lin, Wei-Ming .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 :126-131

[24] Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode [J].

Tyagi, Manisha ;

Tomar, Monika ;

Gupta, Vinay .

MATERIALS RESEARCH BULLETIN, 2015, 66 :123-131

[25] Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode [J].

Deng, R. ;

Yao, B. ;

Li, Y. F. ;

Xu, Y. ;

Li, J. C. ;

Li, B. H. ;

Zhang, Z. Z. ;

Zhang, L. G. ;

Zhao, H. F. ;

Shen, D. Z. .

JOURNAL OF LUMINESCENCE, 2013, 134 :240-243

[26] ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy [J].

Wang, X. J. ;

Tari, S. ;

Sporken, R. ;

Sivananthan, S. .

APPLIED SURFACE SCIENCE, 2011, 257 (08) :3346-3349

[27] Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy [J].

Wei, Wei ;

Qin, Zhixin ;

Fan, Shunfei ;

Li, Zhiwei ;

Shi, Kai ;

Zhu, Qinsheng ;

Zhang, Guoyi .

NANOSCALE RESEARCH LETTERS, 2012, 7

[28] Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy [J].

Wei Wei ;

Zhixin Qin ;

Shunfei Fan ;

Zhiwei Li ;

Kai Shi ;

Qinsheng Zhu ;

Guoyi Zhang .

Nanoscale Research Letters, 7

[29] Optimization and characterization of NiO thin film and the influence of thickness on the electrical properties of n-ZnO nanorods/p-NiO heterojunction [J].

Echresh, Ahmad ;

Abbasi, Mazhar Ali ;

Shoushtari, Morteza Zargar ;

Farbod, Mansoor ;

Nur, Omer ;

Willander, Magnus .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (11)

[30] Evaluating structural, morphological, and multifractal aspects of n-ZnO/p-ZnO homojunctions and n-ZnO/p-NiO heterojunctions [J].

Ghaderi, Atefeh ;

Shafiekhani, Azizollah ;

Talu, Stefan ;

Dejam, Laya ;

Solaymani, Shahram ;

Morozov, Ilya A. ;

Matos, Robert S. ;

Ferreira, Nilson S. ;

Sari, Amir H. .

MICROSCOPY RESEARCH AND TECHNIQUE, 2023, 86 (06) :731-741

← 1 2 3 4 5 →