Sb-doping of ZnO: Phase segregation and its impact on p-type doping

被引：20

作者：

Friedrich, F. ^{[1
]}

Sieber, I. ^{[1
]}

Klimm, C. ^{[1
]}

Klaus, M. ^{[1
]}

Genzel, Ch. ^{[1
]}

Nickel, N. H. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 13期

关键词：

PHOTOLUMINESCENCE; FILMS;

D O I：

10.1063/1.3570691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of antimony (Sb) in pulsed-laser deposited ZnO thin-films was investigated employing scanning electron microscopy, Raman spectroscopy, energy dispersive x-ray spectroscopy, and x-ray diffraction (XRD) measurements. It is shown that an increase in the Sb concentration in the target leads to a significant deterioration of the sample structure which is accompanied by a decrease in the deposition rate. Furthermore, the dopant transfer factor depends strongly on the deposition temperature and exhibits a steplike behavior above 600 degrees C. XRD measurements clearly show that significant Sb-O phase precipitations occur. The implications of our data on p-type doping of ZnO are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3570691]

引用

页数：3

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