Thermoelectric properties of phosphorus-doped indium tellurosilicate: InSiTe3

被引：11

作者：

Suriwong, Tawat ^{[1
]}

Kurosaki, Ken ^{[2
,3
]}

Thongtem, Somchai ^{[4
,5
]}

机构：

[1] Naresuan Univ, Sch Renewable Energy Technol, Phitsanulok 65000, Thailand

[2] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[3] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

[4] Chiang Mai Univ, Dept Phys & Mat Sci, Chiang Mai 50200, Thailand

[5] Chiang Mai Univ, Fac Sci, Mat Sci Res Ctr, Chiang Mai 50200, Thailand

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 735卷

关键词：

InSiTe3; Tellurosilicate; Thermoelectric; Seebeck coefficient; Electrical resistivity; Thermal conductivity;

D O I：

10.1016/j.jallcom.2017.11.093

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Polycrystalline samples of undoped and doped indium tellurosilicate: InSiTe3 were synthesized and their thermoelectric (TE) properties were investigated in the temperature range from 323 to 723 K. Phosphorus (P) was selected as an electron dopant, i.e., the starting compositions were set as InSi1-xPxTe3 (x = 0, 0.02, 0.04, 0.06, and 0.1), The P doping increases the carrier concentration, which leads to decrease in both the electrical resistivity (rho) and the Seebeck coefficient (S), while has little effect on the thermal conductivity (K). As the results, the figure of merit ZT = S-2 rho(-1)k(-1)T increases with increasing the P content. The maximum ZT value is 0.14 at 723 K, obtained for InSi0.9P0.1Te3. The present results suggest that InSiTe3 can be a good TE material. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：75 / 80

页数：6

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