Properties of cubic GaN grown by MBE

被引：19

作者：

Brandt, O ^{[1
]}

Yang, H ^{[1
]}

Mullhauser, JR ^{[1
]}

Trampert, A ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] CHINESE ACAD SCI,NATL RES CTR OPTOELECT TECHNOL,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

cubic gallium arsenide film; molecular beam epitaxy; photoluminescence; transmission electron microscopy;

D O I：

10.1016/S0921-5107(96)01871-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review our investigation of cubic GaN films on (001) GaAs, focusing on the structural, optical, and electrical properties of these films. Cubic GaN films grown epitaxially on GaAs suffer from the large lattice mismatch between these two materials in that they contain extremely high densities of structural defects. Surprisingly, the optical quality of these films does not seem much affected by the presence of defects, as intense photoluminescence is detected a? room temperature and above. Finally, the rather high background electron concentrations in our films is shown to be a consequence of contamination with O and not to be an intrinsic property of cubic phase GaN. (C) 1997 Elsevier Science S.A.

引用

页码：215 / 221

页数：7

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