The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm

被引：18

作者：

Anderson, Chris ^{[1
]}

Ashworth, Dominic ^{[2
]}

Baclea-An, Lorie Mae ^{[1
]}

Bhattari, Suchit ^{[1
]}

Chao, Rikos ^{[1
]}

Claus, Rene ^{[1
]}

Denham, Paul ^{[1
]}

Goldberg, Ken ^{[1
]}

Grenville, Andrew ^{[3
]}

Jones, Gideon ^{[1
]}

Miyakawa, Ryan ^{[1
]}

Murayama, Ken ^{[4
]}

Nakagawa, Hiroki ^{[4
]}

Rekawa, Senajith ^{[1
]}

Stowers, Jason ^{[3
]}

Naulleau, Patrick ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA

[2] SEMATECH, Albany, NY 12203 USA

[3] Inpria Corp, Corvallis, OR 97330 USA

[4] JSR Mirco Inc, Sunnyvale, CA 94089 USA

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY III | 2012年 / 8322卷

关键词：

D O I：

10.1117/12.917386

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

EUV exposures at the SEMATECH Berkeley Microfield Exposure Tool have demonstrated patterning down to 15 nm half pitch in a chemically amplified resist at a dose of 30 mJ/cm2. In addition, the sensitivity of two organic chemically amplified EUV resists has been measured at 6.7 nm and 13.5 nm and the sensitivity at 6.7 nm is shown to be a factor of 6 lower than the sensitivity at 13.5 nm. The reduction of the sensitivity of each resist at 6.7 nm relative to the sensitivity at 13.5 is shown to be correlated to a reduction of the mass attenuation coefficients of the elements involved with photoabsorption.

引用

页数：7

共 2 条

[1] The SEMATECH Berkeley MET: extending EUV learning to 16-nm half pitch [J].

Anderson, Christopher N. ;

Baclea-An, Lorie Mae ;

Denham, Paul E. ;

George, Simi A. ;

Goldberg, Kenneth A. ;

Jones, Michael S. ;

Smith, Nathan S. ;

Wallow, Thomas A. ;

Montgomery, Warren ;

Naulleau, Patrick P. .

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY II, 2011, 7969

[2]

Naulleau P., 2010, P SOC PHOTO-OPT INS, V7636

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