Low work function of crystalline GeTe/Sb2Te3 superlattice-like films induced by Te dangling bonds

被引：24
作者：
Qian, H. [1 ,2 ]
Tong, H. [1 ,2 ]
Zhou, L. J. [1 ,2 ]
Yan, B. H. [1 ,2 ]
Ji, H. K. [1 ,2 ]
Xue, K. H. [1 ,2 ]
Cheng, X. M. [1 ,2 ]
Miao, X. S. [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2016年 / 49卷 / 49期
基金：
中国国家自然科学基金;
关键词：
phase change memory; work function; superlattice-like; PHASE-CHANGE MATERIALS; CHANGE MEMORY; LIMITS; GETE;
D O I：
10.1088/0022-3727/49/49/495302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We utilized a GeTe/Sb2Te3 superlattice-like structure (SLL) to obtain a lower crystalline work function (WF) than that for GeTe. Electrostatic force microscopy measurements demonstrated the difference in crystalline WF. Due to the lower crystalline WF, the heterojunction diodes based on the SLL obtained a better crystalline electrical performance. We preformed numerical simulation to confirm that the higher number of Te dangling bonds caused by the multilayer interface and grain boundaries in the SLL is the main reason for the decrease in WF. X-ray photoelectron spectroscopy analysis indicated that more Te-O bonds formed in SLL than GeTe after atmospheric annealing. While it is easy for the Te dangling bonds to combine dipoles, more Te dangling bonds exist in SLLs.
引用
收藏
页数：7
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