Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

被引：8

作者：

Rossler, C. ^{[1
,2
]}

Bichler, M. ^{[3
]}

Schuh, D. ^{[4
]}

Wegscheider, W. ^{[4
]}

Ludwig, S. ^{[1
,2
]}

机构：

[1] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany

[2] Univ Munich, Fak Phys, D-80539 Munich, Germany

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[4] Univ Regensburg, Inst Angew & Expt Phys 2, D-93040 Regensburg, Germany

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 16期

关键词：

Electronic properties - Nanostructures - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconductor quantum dots - Spectroscopic analysis;

D O I：

10.1088/0957-4484/19/16/165201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/ AlGaAs heterostructure. Quantum point contacts and ( double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.

引用

页数：4

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