Amorphous-iron disilicide: A promising semiconductor

被引：56

作者：

Milosavljevic, M

Shao, G

Bibic, N

McKinty, CN

Jeynes, C

Homewood, KP

机构：

[1] Univ Surrey, Sch Elect Engn Comp & Math, Surrey GU2 7XH, England

[2] VINCA Inst Nucl Sci, YU-11001 Belgrade, Yugoslavia

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.1400760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics.

引用

收藏

页码：1438 / 1440

页数：3

相关论文

共 20 条

[1] High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms [J].

Barradas, NP ;

Knights, AP ;

Jeynes, C ;

Mironov, OA ;

Grasby, TJ ;

Parker, EHC .

PHYSICAL REVIEW B, 1999, 59 (07) :5097-5105

[2] Simulated annealing analysis of Rutherford backscattering data [J].

Barradas, NP ;

Jeynes, C ;

Webb, RP .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :291-293

[3] Ion-assisted deposition of amorphous GaN: Raman and optical properties [J].

Bittar, A ;

Trodahl, HJ ;

Kemp, NT ;

Markwitz, A .

APPLIED PHYSICS LETTERS, 2001, 78 (05) :619-621

[4]

BORISENKO VE, 2000, SEMICONDUCTING SILIC, P106

[5] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS [J].

BOST, MC ;

MAHAN, JE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2696-2703

[6] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[7] The L3A facility at the Vinca Institute: Surface modification of materials, by heavy ion beams from an electron cyclotron resonance ion source [J].

Dobrosavljevic, A ;

Milosavljevic, M ;

Bibic, N ;

Efremov, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (02) :786-788

[8] Microscopic environment of Fe in epitaxially stabilized c-FeSi [J].

Fanciulli, M ;

Weyer, G ;

Svane, A ;

Christensen, NE ;

von Känel, H ;

Müller, E ;

Onda, N ;

Miglio, L ;

Tavazza, F ;

Celino, M .

PHYSICAL REVIEW B, 1999, 59 (05) :3675-3687

[9] Optical absorption and photoluminescence studies of beta-FeSi2 prepared by heavy implantation of Fe+ ions into Si [J].

Katsumata, H ;

Makita, Y ;

Kobayashi, N ;

Shibata, H ;

Hasegawa, M ;

Aksenov, I ;

Kimura, S ;

Obara, A ;

Uekusa, S .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) :5955-5962

[10] PHOTOELECTRON SPECTROSCOPIC INVESTIGATIONS OF THIN FEXSI100-X FILMS [J].

KILPER, R ;

TEICHERT, S ;

FRANKE, T ;

HAUSSLER, P ;

BOYEN, HG ;

COSSYFAVRE, A ;

OELHAFEN, P .

APPLIED SURFACE SCIENCE, 1995, 91 (1-4) :93-97