Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating

被引：18

作者：

Casanova, J. R. ^{[1
]}

Heredia, E. A. ^{[1
]}

Bojorge, C. D. ^{[1
]}

Canepa, H. R. ^{[1
]}

Kellermann, G. ^{[2
]}

Craievich, A. F. ^{[3
]}

机构：

[1] CITEDEF CINSO CONICET Ctr Invest Solidos, Buenos Aires, DF, Argentina

[2] Univ Fed Parana, Dept Fis, Curitiba, PR, Brazil

[3] Univ Sao Paulo, Inst Fis, BR-01498 Sao Paulo, Brazil

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 23期

基金：

巴西圣保罗研究基金会;

关键词：

ZnO; Nanostructured thin films; XR; GISAXS; X-RAY-SCATTERING;

D O I：

10.1016/j.apsusc.2011.06.136

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanocrystalline ZnO thin films prepared by the sol-gel dip-coating technique were characterized by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), X-ray reflectivity (XR) and grazing incidence small-angle X-ray scattering (GISAXS). The structures of several thin films subjected to (i) isochronous annealing at 350, 450 and 550 degrees C, and (ii) isothermal annealing at 450 degrees C during different time periods, were characterized. The studied thin films are composed of ZnO nanocrystals as revealed by analysing several GIXD patterns, from which their average sizes were determined. Thin film thickness and roughness were determined from quantitative analyses of AFM images and XR patterns. The analysis of XR patterns also yielded the average density of the studied films. Our GISAXS study indicates that the studied ZnO thin films contain nanopores with an ellipsoidal shape, and flattened along the direction normal to the substrate surface. The thin film annealed at the highest temperature, T = 550 degrees C, exhibits higher density and lower thickness and nanoporosity volume fraction, than those annealed at 350 and 450 degrees C. These results indicate that thermal annealing at the highest temperature (550 degrees C) induces a noticeable compaction effect on the structure of the studied thin films. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：10045 / 10051

页数：7

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