Spin relaxation in cubic III-V semiconductor low-dimensional structures via the interaction with polar-optical phonons - art. no. 015326

被引:9
作者
Dyson, A [1 ]
Ridley, BK [1 ]
机构
[1] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 04期
关键词
D O I
10.1103/PhysRevB.72.045326
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin-relaxation rates have been calculated for the D'yakonov-Perel (DP) mechanism involving the interaction with polar-optical phonons. The inelastic nature of the collisions has been fully taken into account and expressions for the energy-dependent time constants have been found for arbitrary degeneracy and for both strong and weak spin-population differences. We investigate the energy and temperature dependence of the spin-relaxation rates for a range of quantum well (QW) widths and quantum wire (QWR) cross sections. The spin-relaxation time is found to exhibit a monotonic temperature dependence and an E-2 dependence on subband energy.
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页数:7
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