Vapor-Solid Growth of Few-Layer Graphene Using Radio Frequency Sputtering Deposition and Its Application on Field Emission

被引：93

作者：

Deng, Jian-hua ^{[1
]}

Zheng, Rui-ting ^{[1
]}

Zhao, Yong ^{[2
]}

Cheng, Guo-an ^{[1
]}

机构：

[1] Beijing Normal Univ, Coll Nucl Sci & Technol, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China

[2] Nanchang Univ, Dept Phys, Jiangxi 330031, Peoples R China

来源：

ACS NANO | 2012年 / 6卷 / 05期

基金：

中国国家自然科学基金;

关键词：

few-layer graphene; multiwalled carbon nanotubes; hybrid vapor-solid growth; field emission; CARBON NANOTUBES; EPITAXIAL GRAPHENE; DIRAC FERMIONS; FILMS; FABRICATION; GRAPHITE; GAS; MECHANISM; EMITTERS; SHEETS;

D O I：

10.1021/nn300900v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The carbon nanotube (CNT) and graphene hybrid is an attractive candidate for field emission (FE) because of its unique properties, such as high conductivity, large aspect ratio of CNT, and numerous sharp edges of graphene. We report here a vapor-solid growth of few-layer graphene (FLG, less than 10 layers) on CNTs (FLG/CNT) and Si wafers using a radio frequency sputtering deposition system. Based on SEM, TEM, and Raman spectrum analyses, a defect nucleation mechanism of the FIG growth was proposed. The FE measurements indicate that the FLG/CNT hybrids have low turn-on (0.956 V/mu m) and threshold fields (1.497 V/mu m), large field enhancement factor (similar to 4398), and good stability. Excellent FE properties of the FLG/CNT hybrids make them attractive candidates as high-performance field emitters.

引用

页码：3727 / 3733

页数：7

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