Spin-orbit torque-based reconfigurable physically unclonable functions

被引:17
作者
Zhang, Jian [1 ]
Guo, Zhe [1 ]
Zhang, Shuai [1 ]
Cao, Zhen [1 ]
Li, Ruofan [1 ]
Cao, Jiangwei [2 ]
Song, Min [3 ]
Wan, Meilin [3 ]
Hong, Jeongmin [1 ]
You, Long [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[2] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China
[3] Hubei Univ, Hubei Key Lab Ferro & Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Peoples R China
基金
中国国家自然科学基金;
关键词
MAGNETIZATION; SPINTRONICS; MEMORY; DEVICE; LOGIC;
D O I
10.1063/5.0004089
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spin torque effects discovered in spintronics have a broad prospect for applications in information memory and logic devices, wherein deterministic switching is highly desired. Variations between devices originating from the fabrication process and inherently random physical features are detrimental to memory and logic devices; however, they are potential entropy sources for hardware security primitives. Here, we demonstrate two types of spin-orbit torque (SOT)-based reconfigurable physically unclonable functions (rPUFs) that are based on process-induced SOT switching current variations and SOT-induced domain wall (DW) nonlinear dynamics, respectively. The experimental results show that both rPUFs have excellent performance in terms of reliability and uniqueness, and the performance is sustained after reconfiguring. Furthermore, the DW nonlinear dynamics-based rPUF can be reconfigured for an unlimited number of times with high uniformity. We believe that our work paves a way for information security and expands the application fields of spintronics.
引用
收藏
页数:5
相关论文
共 38 条
[1]  
[Anonymous], S VLSI TECHN
[2]  
Behin-Aein B, 2010, NAT NANOTECHNOL, V5, P266, DOI [10.1038/nnano.2010.31, 10.1038/NNANO.2010.31]
[3]   Emission of spin waves by a magnetic multilayer traversed by a current [J].
Berger, L .
PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358
[4]  
Brederlow R., 2006, IEEE INT SOLID STATE, DOI [DOI 10.1109/ISSCC.2006.1696222.21C.S, DOI 10.1109/ISSCC.2006.1696222, 10.1109/ISSCC.2006.1696222]
[5]  
Cai KM, 2017, NAT MATER, V16, P712, DOI [10.1038/nmat4886, 10.1038/NMAT4886]
[6]   Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory [J].
Carboni, Roberto ;
Chen, Wei ;
Siddik, Manzar ;
Harms, Jon ;
Lyle, Andy ;
Kula, Witold ;
Sandhu, Gurtej ;
Ielmini, Daniele .
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) :951-954
[7]   Highly Secure Physically Unclonable Cryptographic Primitives Based on Interfacial Magnetic Anisotropy [J].
Chen, Huiming ;
Song, Min ;
Guo, Zhe ;
Li, Ruofan ;
Zou, Qiming ;
Luo, Shijiang ;
Zhang, Shuai ;
Luo, Qiang ;
Hong, Jeongmin ;
You, Long .
NANO LETTERS, 2018, 18 (11) :7211-7216
[8]   MRAM PUF: A Novel Geometry Based Magnetic PUF With Integrated CMOS [J].
Das, Jayita ;
Scott, Kevin ;
Rajaram, Srinath ;
Burgett, Drew ;
Bhanja, Sanjukta .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2015, 14 (03) :436-443
[9]  
Fukami S, 2016, NAT MATER, V15, P535, DOI [10.1038/nmat4566, 10.1038/NMAT4566]
[10]  
Garello K, 2019, S VLSI TECH, pT194