Structure, morphology and optical properties of nanocyrstalline yttrium oxide (Y2O3) thin films

被引:176
作者
Mudavakkat, V. H. [2 ]
Atuchin, V. V. [3 ]
Kruchinin, V. N. [4 ]
Kayani, A. [5 ]
Ramana, C. V. [1 ]
机构
[1] Univ Texas El Paso, Dept Mech Engn, El Paso, TX 79968 USA
[2] Univ Texas El Paso, Dept Elect & Comp Engn, El Paso, TX 79968 USA
[3] SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk, Russia
[4] SB RAS, Inst Semicond Phys, Lab Ellipsometry Semicond Mat & Struct, Novosibirsk 630090 90, Russia
[5] Western Michigan Univ, Dept Phys, Kalamazoo, MI 49008 USA
关键词
Y2O3 thin films; Crystal structure; Morphology; Band gap; Optical constants; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; FLASH MEMORY; MICROSTRUCTURE; GROWTH; DIFFRACTION; PHOSPHORS; MATRIX; METAL;
D O I
10.1016/j.optmat.2011.11.027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Yttrium oxide (Y2O3) thin films were grown onto Si(100) substrates using reactive magnetron sputter-deposition at temperatures ranging from room temperature (RT) to 500 degrees C. The effect of growth temperature (T-s) on the growth behavior, microstructure and optical properties of Y2O3 films was investigated. The structural studies employing reflection high-energy electron diffraction RHEED indicate that the films grown at room temperature (RT) are amorphous while the films grown at T-s = 300-500 degrees C are nanocrystalline and crystallize in cubic structure. Grain-size (L) increases from similar to 15 to 40 nm with increasing T-s. Spectroscopic ellipsometry measurements indicate that the size-effects and ultra-microstructure were significant on the optical constants and their dispersion profiles of Y2O3 films. A significant enhancement in the index of refraction (n) (from 2.03 to 2.25) is observed in well-defined Y2O3 nanocrystalline films compared to that of amorphous Y2O3. The observed changes in the optical constants were explained on the basis of increased packing density and crystallinity of the films with increasing T-s. The spectrophotometry analysis indicates the direct nature of the band gap (E-g) in Y2O3 films. E-g values vary in the range of 5.91-6.15 eV for Y2O3 films grown in the range of RT-500 degrees C, where the lower E-g values for films grown at lower temperature is attributed to incomplete oxidation and formation of chemical defects. A direct, linear relationship between microstructure and optical parameters found for Y2O3 films suggest that tuning optical properties for desired applications can be achieved by controlling the size and structure at the nanoscale dimensions. (c) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:893 / 900
页数:8
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