Formation of two-dimensional Si/Ge nanostructures observed by STM

被引:0
作者
Voigtländer, B [1 ]
机构
[1] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany
来源
QUANTUM DOTS: FUNDAMENTALS, APPLICATIONS, AND FRONTIERS | 2005年 / 190卷
关键词
silicon; germanium; nanostructures; nanowires; scanning tunneling microscopy;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The growth of kinetically self-organized two-dimensional (213) islands is described for Si/Si(111) epitaxy. The island size distribution for this system was measured using scanning tunneling microscopy (STM). The potential formation of thermodynamically stable strained islands of a specific size is discussed. The formation of 2D Si/Ge nanostructures at preexisting defects is studied. The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si. and G. A difference in apparent height is measured in STM images for Si and Ge, respectively. Additionally, different kinds of 2D Si/Ge nanostructures, such as alternating Si and Ge nanorings having a width of 5-10 nm, were grown.
引用
收藏
页码:43 / 54
页数:12
相关论文
共 8 条