Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation

被引：54

作者：

Nanda, Gaurav ^{[1
]}

Goswami, Srijit ^{[1
]}

Watanabe, Kenji ^{[2
]}

Taniguchi, Takashi ^{[2
]}

Alkemade, Paul F. A. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

NANO LETTERS | 2015年 / 15卷 / 06期

关键词：

Helium ion microscopy; graphene; hexagonal boron nitride (h-BN); ion-induced damage; self-healing; n-doping; RAMAN-SPECTROSCOPY; BORON; FABRICATION; SCATTERING; NITROGEN; DAMAGE; TOOL;

D O I：

10.1021/acs.nanolett.5b00939

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We study with Raman spectroscopy the influences of He+ bombardment and the environment on beam-induced defects, in graphene encapsulated in hexagonal boron nitride (h-BN). We show, for the first time experimentally the autonomous behavior of the D', defect Raman peak: in Contrast to the D defect peak, the D' defect peak is sensitive to the local environment. In particular, it saturates with ion dose in the encapsulated graphene. Electrical measurements reveal n-type: conduction in the BN-encapsulated graphene. We conclude that unbound atoms ("interfacials between the sp(2)-layers of graphene and h-BN promote self healing of the beam-induced lattice damage and that nitrogen-carbon exchange leads to n-doping of graphene:

引用

页码：4006 / 4012

页数：7

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