Formation and Evaluation of Electroless-Plated Barrier Films for High-Aspect-Ratio Through-Si Vias

被引：6

作者：

Miyake, Hiroshi ^{[1
]}

Inoue, Fumihiro ^{[1
]}

Yokoyama, Takumi ^{[1
]}

Shimizu, Tomohiro ^{[1
]}

Tanaka, Shukichi ^{[2
]}

Terui, Toshifumi ^{[2
]}

Shingubara, Shoso ^{[1
]}

机构：

[1] Kansai Univ, Grad Sch Sci & Engn, Osaka 5648680, Japan

[2] Kobe Adv Res Ctr, Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

基金：

日本学术振兴会;

关键词：

SELF-ASSEMBLED-MONOLAYER; 3-DIMENSIONAL CHIP STACKING; BOTTOM-UP FILL; CU SEED LAYER; COPPER; DEPOSITION; FABRICATION; HOLES; ELECTRODEPOSITION; METAL;

D O I：

10.1143/JJAP.50.05ED01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of a diffusion barrier layer in a through-Si via (TSV) has been studied with a combination of nanoparticle catalyst and electroless plating (ELP). We used Au-nanoparticles (Au-NPs) or Pd-nanoparticles (Pd-NPs) as catalysts for ELP of Ni- and Co-alloy barrier layers. We studied deposition of Ni-B and Co-B films in high-aspect-ratio (AR) TSV. Then, we succeeded in controlling the deposition profile of Ni- B in a high-AR TSV by the addition of bis(3-sulfopropyl)-disulfide (SPS). SPS turned out to be an inhibitor of electroless plating of Ni-B. On the other hand, the Co-B film was deposited conformally without additive. The electrical resistivity of Cu after annealing Cu/barrier stacked structure suggests that Co-B has better thermal stability than Ni-B. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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