Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes

被引：308

作者：

David, Aurelien ^{[1
]}

Grundmann, Michael J. ^{[1
]}

Kaeding, John F. ^{[1
]}

Gardner, Nathan F. ^{[1
]}

Mihopoulos, Theodoros G. ^{[1
]}

Krames, Michael R. ^{[1
]}

机构：

[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.2839305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the carrier distribution in multi quantum well (multi-QW) InGaN light-emitting diodes. Conventional wisdom would assume that a large number of QWs lead to a smaller carrier density per QW, enabling efficient carrier recombination at high currents. We use angle-resolved far-field measurements to determine the location of spontaneous emission in a series of multi-QW samples. They reveal that, no matter how many QWs are grown, only the QW nearest the p layer emits light under electrical pumping, which can limit the performances of high-power devices. (c) 2008 American Institute of Physics.

引用

页数：3

共 11 条

[1] Impact of planar microcavity effects on light extraction - Part I: Basic concepts and analytical trends [J].

Benisty, H ;

De Neve, H ;

Weisbuch, C .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1612-1631

[2] Method of source terms for dipole emission modification in modes of arbitrary planar structures [J].

Benisty, H ;

Stanley, R ;

Mayer, M .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1998, 15 (05) :1192-1201

[3] k center dot p method for strained wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504

[4] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2 [J].

Gardner, N. F. ;

Mueller, G. O. ;

Shen, Y. C. ;

Chen, G. ;

Watanabe, S. ;

Gotz, W. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (24)

[5] Status and future of high-power light-emitting diodes for solid-state lighting [J].

Krames, Michael R. ;

Shchekin, Oleg B. ;

Mueller-Mach, Regina ;

Mueller, Gerd O. ;

Zhou, Ling ;

Harbers, Gerard ;

Craford, M. George .

JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175

[6] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes [J].

Mukai, T ;

Yamada, M ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7A) :3976-3981

[7] Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness [J].

Pattison, P. Morgan ;

David, Aurelien ;

Sharma, Rajat ;

Weisbuch, Claude ;

DenBaars, Steven ;

Nakamura, Shuji .

APPLIED PHYSICS LETTERS, 2007, 90 (03)

[8] Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates [J].

Schubert, Martin F. ;

Chhajed, Sameer ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Cho, Jaehee .

APPLIED PHYSICS LETTERS, 2007, 91 (05)

[9] Auger recombination in InGaN measured by photoluminescence [J].

Shen, Y. C. ;

Mueller, G. O. ;

Watanabe, S. ;

Gardner, N. F. ;

Munkholm, A. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (14)

[10] Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes [J].

Shen, YC ;

Wierer, JJ ;

Krames, MR ;

Ludowise, MJ ;

Misra, MS ;

Ahmed, F ;

Kim, AY ;

Mueller, GO ;

Bhat, JC ;

Stockman, SA ;

Martin, PS .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2221-2223

← 1 2 →