Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

被引：0

作者：

Zhao, Y ^{[1
]}

Fung, S ^{[1
]}

Beling, CD ^{[1
]}

Xu, XL ^{[1
]}

Gong, M ^{[1
]}

Sun, NF ^{[1
]}

Sun, TN ^{[1
]}

Chen, XD ^{[1
]}

Zhang, RG ^{[1
]}

Liu, SL ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed.

引用

页码：92 / 95

页数：4