Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

被引：8
|
作者：
Sayid, Sayid A. [1 ]
Marko, Igor P. [1 ]
Sweeney, Stephen J. [1 ]
Barrios, Pedro [2 ]
Poole, Philip J. [2 ]
机构：
[1] Univ Surrey, Adv Technol Inst, Dept Phys, Surrey GU2 7XH, England
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 16期
基金：
英国工程与自然科学研究理事会;
关键词：
AUGER RECOMBINATION; TEMPERATURE; DEPENDENCE; PRESSURE;
D O I：
10.1063/1.3504253
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The threshold current density, J(th), and its radiative component, J(rad), in 1.55 mu m InAs/InP (100) quantum dot lasers are measured as a function of temperature and hydrostatic pressure. We find that J(rad) is relatively temperature insensitive. However, J(th) increases significantly with temperature leading to a characteristic temperature T(0)=72 K over the range 220-290 K. Nonradiative recombination accounts for up to 94% of J(th) at T=293 K. J(th) decreases with increasing pressure by 35% over 8 kbar causing an increase in T(0) from 72 to 88 K. The results indicate that nonradiative Auger recombination determines temperature behavior of these devices and T(0) value. (C) 2010 American Institute of Physics. [doi:10.1063/1.3504253]
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页数：3
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