Thermoelectric properties of Sb-doped Mg2Si semiconductors

被引：222

作者：

Tani, Jun-Ichi ^{[1
]}

Kido, Hiroyasu ^{[1
]}

机构：

[1] Osaka Municipal Tech Res Inst, Dept Elect Mat, Joto Ku, Osaka 5368553, Japan

来源：

INTERMETALLICS | 2007年 / 15卷 / 09期

关键词：

silicides; various; thermoelectric properties; Ab initio calculations; thermoelectric power generation;

D O I：

10.1016/j.intermet.2007.02.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The thermoelectric properties of Sb-doped Mg2Si (Mg2Si:Sb = 1:x(0.001 <= x <= 0.02)) fabricated by spark plasma sintering have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity (p), Seebeck coefficient (S), and thermal conductivity (K) between 300 and 900 K. Sb-doped Mg2Si samples are n-type in the measured temperature range. The electron concentration of Sb-doped Mg2Si at 300 K ranges from 2.2 x 10(19) for the Sb concentration, where x = 0.001, to 1.5 x 10(20) cm(-3) for x = 0.02. First-principles calculation revealed that Sb atoms are expected to be primarily located at the Si sites in Mg2Si. The electrical resistivity, Seebeck coefficient, and thermal conductivity are strongly affected by the Sb concentration. The sample x = 0.02 shows a maximum value of the figure of merit ZT, which is 0.56 at 862 K. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1202 / 1207

页数：6

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