Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures

被引：1

作者：

Gareso, P. L. ^{[1
]}

Tan, H. H. ^{[2
]}

Jagadish, C. ^{[2
]}

机构：

[1] Hasanuddin Univ, Fac Math & Nat Sci, Dept Phys, Makassar 90245, Indonesia

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 08期

关键词：

MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; CARBON-DOPED GAAS; LATTICE CONTRACTION; GROWTH; LAYER; INTERDIFFUSION; TETRACHLORIDE; SUPPRESSION; DEPOSITION;

D O I：

10.1149/2.0251708jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of InGaAs/InGaAs quantum well laser structures using double-crystal X-ray diffraction (DCXRD) and photoluminescence measurements. X-ray measurements showed that some part of the carbon was electrically activated after annealing without a dielectric capping layer, but not after annealing with a TiO2 capping layer. For a SiO2 capping layer, the tensile peak was still observed after annealing which is comparable to the samples annealed without capping layer. Photoluminescence results showed that a large energy shift was observed when the samples were coated with SiO2. A negligible photoluminescence shift was observed after annealing when the samples coated with TiO2. (C) 2017 The Electrochemical Society. All rights reserved.

引用

页码：N122 / N126

页数：5

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