Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

被引：2

作者：

Jackson, H. E. ^{[1
]}

Perera, S. ^{[1
]}

Pemasiri, K. ^{[1
]}

Smith, L. M. ^{[1
]}

Yarrison-Rice, J. ^{[2
]}

Kang, J. H. ^{[3
]}

Gao, Q. ^{[3
]}

Tan, H. H. ^{[3
]}

Jagadish, C. ^{[3
]}

Guo, Y. ^{[4
]}

Zou, J. ^{[4
]}

机构：

[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[2] Miami Univ, Dept Phys, Oxford, OH 45056 USA

[3] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT, Australia

[4] Univ Queensland, Mat Engn, Brisbane, Qld, Australia

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

基金：

澳大利亚研究理事会; 美国国家科学基金会;

关键词：

InP; wurtzite; photoluminescence excitation spectroscopy; crystal field; spin orbit energy;

D O I：

10.1063/1.3666463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use time-resolved photoluminescence and photoluminescence excitation spectroscopy to obtain the valence band parameters of wurtzite InP nanowires. We observe the A, B, and C hole bands for these nanowires and obtain both the crystal field and the spin-orbit energies for wurtzite InP nanowires.

引用

页数：2

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