Solid Phase Epitaxial Re-growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure

被引：0

作者：

Bak-Misiuk, Jadwiga ^{[1
]}

Misiuk, Andrzej ^{[2
]}

Barcz, Adam ^{[1
]}

Romanowski, Przemyslaw ^{[1
]}

机构：

[1] PAS, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV | 2011年 / 178-179卷

关键词：

Cz-Si:Si; SPER; self-implantation; annealing; high hydrostatic pressure; SELF-IMPLANTED SI; HIGH-TEMPERATURE; SILICON;

D O I：

10.4028/www.scientific.net/SSP.178-179.416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x10(16) cm(-2), energy 150 keV), subsequently annealed for 5 h at up to 1400 K under Ar pressure up to 1.4 GPa, was investigated by Secondary Ion Mass Spectrometry (SIMS) and X-ray methods. Annealing of Cz-Si:Si resulted in pressure-dependent SPER with a marked carbon and oxygen gettering within regrown region. Depth profiling of carbon and oxygen contaminants provides useful information concerning SPER in implanted single crystalline silicon.

引用

页码：416 / +

页数：2

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